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Effect of carbon incorporation on electrical properties of n-type GaN surfaces
| Title: | Effect of carbon incorporation on electrical properties of n-type GaN surfaces |
| Authors: | Kimura, Takeshi Browse this author | | Hashizume, Tamotsu Browse this author →KAKEN DB |
| Issue Date: | Jan-2009 |
| Publisher: | American Institute of Physics |
| Journal Title: | Journal of Applied Physics |
| Volume: | 105 |
| Issue: | 1 |
| Start Page: | 014503 |
| Publisher DOI: | 10.1063/1.3056395 |
| Abstract: | We intentionally incorporated carbon into n-GaN by high-temperature annealing of a SiNx/CNx/GaN structure to study the effect of unintentional carbon incorporation on the electrical properties of n-type GaN surfaces. X-ray photoelectron spectroscopy results showed outdiffusion of Ga atoms from the GaN surface during high-temperature annealing even when the SiNx layer was present. The current-voltage characteristics showed a drastic increase in current in the forward and reverse directions of the Schottky diode in the carbon-incorporated sample. They also showed no temperature dependence from 150 to 300 K. The current-voltage curves of the carbon-incorporated samples in the forward and reverse directions could be almost completely reproduced by assuming an exponentially decaying distribution from the surface for shallow donors. |
| Rights: | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/35595 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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