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Effect of carbon incorporation on electrical properties of n-type GaN surfaces

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Title: Effect of carbon incorporation on electrical properties of n-type GaN surfaces
Authors: Kimura, Takeshi Browse this author
Hashizume, Tamotsu Browse this author →KAKEN DB
Issue Date: Jan-2009
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 105
Issue: 1
Start Page: 014503
Publisher DOI: 10.1063/1.3056395
Abstract: We intentionally incorporated carbon into n-GaN by high-temperature annealing of a SiNx/CNx/GaN structure to study the effect of unintentional carbon incorporation on the electrical properties of n-type GaN surfaces. X-ray photoelectron spectroscopy results showed outdiffusion of Ga atoms from the GaN surface during high-temperature annealing even when the SiNx layer was present. The current-voltage characteristics showed a drastic increase in current in the forward and reverse directions of the Schottky diode in the carbon-incorporated sample. They also showed no temperature dependence from 150 to 300 K. The current-voltage curves of the carbon-incorporated samples in the forward and reverse directions could be almost completely reproduced by assuming an exponentially decaying distribution from the surface for shallow donors.
Rights: Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Type: article
URI: http://hdl.handle.net/2115/35595
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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