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Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

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Title: Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution
Authors: Shiozaki, Nanako Browse this author
Hashizume, Tamotsu Browse this author →KAKEN DB
Issue Date: 15-Mar-2009
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 105
Issue: 6
Start Page: 064912
Publisher DOI: 10.1063/1.3079502
Abstract: Surface control of n-GaN was performed by applying a photoelectrochemical oxidation method in a glycol solution to improve the optical and electronic characteristics. The fundamental properties of the oxidation were investigated. The oxidation, chemical composition, and bonding states were analyzed by x-ray photoelectron spectroscopy and micro-Auger electron spectroscopy, in which confirmed the formation of gallium oxide on the surface. The oxide formation rate was about 8 nm/min under UV illumination of 4 mW/cm2. After establishing the basic properties for control of n-GaN oxidation, the surface control technique was applied to achieve low-damage etching, enhancement of the photoluminescence intensity, and selective passivation of the air-exposed sidewalls in an AlGaN/GaN high electron mobility transistor wire structure. The capacitance-voltage measurement revealed the minimum interface- state density between GaN and anodic oxide to be about 5×10^11 cm^[−2] eV^[−1], which is rather low value for compound semiconductors.
Rights: Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Type: article
URI: http://hdl.handle.net/2115/38102
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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