Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/38669

Title:	Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks
Authors:	Kasai, Seiya Browse this author →KAKEN DB
Authors:	Asai, Tetsuya Browse this author →KAKEN DB
Issue Date:	25-Aug-2008
Publisher:	Japan Society of Applied Physics
Journal Title:	Applied Physics Express
Volume:	1
Issue:	8
Start Page:	083001
Publisher DOI:	10.1143/APEX.1.083001
Abstract:	Investigation of stochastic resonance in GaAs-based nanowire field-effect transistors (FETs) controlled by Schottky wrap gate and their networks is described. When a weak pulse train is given to the gate of the FET operating in a subthreshold region, the correlation between the input-pulse and source-drain current increases by adding input noise. Enhancement of the correlation is observed in a summing network of the FETs. Measured correlation coefficient of the present system can be larger than that in a linear system in the wide range of noise. An analytical model based on the electron motion over a gate-induced potential barrier quantitatively explains the experimental behaviors.
Rights:	© 2008 The Japan Society of Applied Physics
Type:	article (author version)
URI:	http://hdl.handle.net/2115/38669
Appears in Collections:	情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西誠也

OAI-PMH ( junii2 , jpcoar_1.0 )

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