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Effect of As preadsorption on InAs nanowire heteroepitaxy on Si(111) : A first-principles study
| Title: | Effect of As preadsorption on InAs nanowire heteroepitaxy on Si(111) : A first-principles study |
| Authors: | Koga, Hiroaki Browse this author →KAKEN DB |
| Keywords: | 半導体表面構造 | | ナノワイヤ | | ヘテロエピタキシー | | 第一原理計算 | | PACS=68.43.Bc | | PACS=68.47.Fg | | PACS=61.72.uf | | PACS=61.72.uj |
| Issue Date: | Dec-2009 |
| Publisher: | American Physical Society |
| Journal Title: | Physical review. B, Condensed matter and materials physics |
| Volume: | 80 |
| Issue: | 24 |
| Start Page: | 245302 |
| Publisher DOI: | 10.1103/PhysRevB.80.245302 |
| Abstract: | Arsenic preadsorption has recently been found to be crucial for selective-area epitaxial growth of oriented III-V semiconductor nanowires on Si(111). To understand the effect of preadsorption on the heteroepitaxy, this first-principles study examines the structure of As-adsorbed Si(111) surfaces. Reconstruction models such as adatom, trimer, and dimer-adatom-stacking fault structures are found to be metastable. The stability of unreconstructed arsenide structure (1×1-As) is confirmed but the faulted and unfaulted domains of 1×1-As are found to be practically degenerate in energy. These domains can therefore coexist on a Si(111)-As surface, and then epitaxial growth will be disrupted at domain boundaries where translational symmetry is broken. Indium adsorption on the Si(111)-As surface, however, destabilizes unfaulted domains, thus assisting its transformation into a coherent surface that allows epitaxy. This effect is attributed to the interlayer covalent interactions induced by In p electrons. |
| Description: | 新規ナノ物質である化合物半導体ナノワイヤをエレクトロニクスデバイスに応用する上で、シリコン基板へのヘテロ成長は極めて重要なプロセスです。最近の研究により、成長前のヒ素・インジウム吸着が不可欠であることがわかっています。この論文では、吸着表面構造の第一原理計算に基づき、その物理的要因を明らかにします。 |
| Rights: | © 2009 American Physical Society |
| Type: | article |
| URI: | http://hdl.handle.net/2115/40002 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 古賀 裕明
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