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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.141 >

高融点金属ゲートを用いたセルフアライン形InP MISFETの製作プロセスの検討

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/42115

Title: 高融点金属ゲートを用いたセルフアライン形InP MISFETの製作プロセスの検討
Other Titles: Fabrication Process of Self-Aligned InP MISFETs Using Refractory Metal Gates
Authors: 田中, 利広1 Browse this author
石井, 敦司2 Browse this author
萩田, 晃一3 Browse this author
大野, 英男4 Browse this author
長谷川, 英機5 Browse this author
Authors(alt): Tanaka, Toshihiro1
Ishii, Atsushi2
Hagita, Kouichi3
Ohno, Hideo4
Hasegawa, Hideki5
Issue Date: 29-Jul-1988
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 141
Start Page: 125
End Page: 135
Type: bulletin (article)
URI: http://hdl.handle.net/2115/42115
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.141

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