|
Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.141 >
高融点金属ゲートを用いたセルフアライン形InP MISFETの製作プロセスの検討
| Title: | 高融点金属ゲートを用いたセルフアライン形InP MISFETの製作プロセスの検討 |
| Other Titles: | Fabrication Process of Self-Aligned InP MISFETs Using Refractory Metal Gates |
| Authors: | 田中, 利広1 Browse this author | | 石井, 敦司2 Browse this author | | 萩田, 晃一3 Browse this author | | 大野, 英男4 Browse this author | | 長谷川, 英機5 Browse this author |
| Authors(alt): | Tanaka, Toshihiro1 | | Ishii, Atsushi2 | | Hagita, Kouichi3 | | Ohno, Hideo4 | | Hasegawa, Hideki5 |
| Issue Date: | 29-Jul-1988 |
| Publisher: | 北海道大学 |
| Journal Title: | 北海道大學工學部研究報告 |
| Journal Title(alt): | Bulletin of the Faculty of Engineering, Hokkaido University |
| Volume: | 141 |
| Start Page: | 125 |
| End Page: | 135 |
| Type: | bulletin (article) |
| URI: | http://hdl.handle.net/2115/42115 |
| Appears in Collections: | 北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.141
|
|
