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Comparison of the magnetic properties of GaInAs/MnAs and GaAs/MnAs hybrids with random and ordered arrangements of MnAs nanoclusters
| Title: | Comparison of the magnetic properties of GaInAs/MnAs and GaAs/MnAs hybrids with random and ordered arrangements of MnAs nanoclusters |
| Authors: | Elm, M. T. Browse this author | | Michel, C. Browse this author | | Stehr, J. Browse this author | | Hofmann, D. M. Browse this author | | Klar, P. J. Browse this author | | Ito, S. Browse this author | | Hara, S. Browse this author | | Krug von Nidda, H.-A. Browse this author |
| Issue Date: | Jan-2010 |
| Publisher: | American Institute of Physics |
| Journal Title: | Journal of Applied Physics |
| Volume: | 107 |
| Issue: | 1 |
| Start Page: | 013701 |
| Publisher DOI: | 10.1063/1.3275427 |
| Abstract: | Random arrangements of ferromagnetic MnAs nanoclusters were deposited on (111)B-GaInAs surfaces by standard metal-organic vapor-phase epitaxy (MOVPE). Ordered arrangements of MnAs nanoclusters and cluster chains were obtained by selective-area MOVPE on prepatterned (111)B-GaAs substrates. This new method enables one to control the arrangement of nanoclusters in the growth process offering interesting opportunities to tune the properties of individual MnAs clusters as well as the interaction between the carriers in the surrounding semiconductor matrix and the clusters. The magnetic anisotropy of the MnAs clusters was investigated by magnetic force microscopy and ferromagnetic resonance measurements. The in-plane magnetic anisotropy is mainly determined by the interplay of cluster shape and magnetocrystalline anisotropy while the hard magnetic axis of the clusters is perpendicular to the sample plane independent of cluster shape. The magnetotransport measurements demonstrate that the cluster arrangements strongly influence the transport properties. |
| Rights: | Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 107, 013701, 2010 and may be found at http://dx.doi.org/10.1063/1.3275427 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/42498 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 原 真二郎
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