Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/42586

Title:	Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors
Authors:	Yoshizawa, Naoki Browse this author
	Sato, Taketomo Browse this author →KAKEN DB
	Hashizume, Tamotsu Browse this author
Issue Date:	Sep-2009
Publisher:	Japan Society of Applied Physics
Journal Title:	Japanese Journal of Applied Physics
Volume:	48
Issue:	9
Start Page:	091102
Publisher DOI:	10.1143/JJAP.48.091102
Abstract:	We prove with this paper that InP-based open-gate Field Effect Transistors (FETs) work well as liquid-phase chemical sensors. The open-gate FET clearly exhibited current saturation and a pinch-off behavior in the electrolyte, resulting in a rapid response to the gate bias applied via the electrolyte. A series of sensing measurements showed that the surface potential of the InP linearly changed with the pH values of the electrolytes in a pH range from 3.0 to 12.0. The pH sensitivity of the open-gate FETs depended on the ion species contained in the electrolyte. A Si3N4 layer was useful as an ion selective membrane for the InP open-gate FETs to improve the selectivity of H+ ions.
Rights:	© 2009 The Japan Society of Applied Physics
Type:	article (author version)
URI:	http://hdl.handle.net/2115/42586
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤威友

OAI-PMH ( junii2 , jpcoar_1.0 )

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