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Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors

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Title: Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors
Authors: Yoshizawa, Naoki Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Hashizume, Tamotsu Browse this author
Issue Date: Sep-2009
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics
Volume: 48
Issue: 9
Start Page: 091102
Publisher DOI: 10.1143/JJAP.48.091102
Abstract: We prove with this paper that InP-based open-gate Field Effect Transistors (FETs) work well as liquid-phase chemical sensors. The open-gate FET clearly exhibited current saturation and a pinch-off behavior in the electrolyte, resulting in a rapid response to the gate bias applied via the electrolyte. A series of sensing measurements showed that the surface potential of the InP linearly changed with the pH values of the electrolytes in a pH range from 3.0 to 12.0. The pH sensitivity of the open-gate FETs depended on the ion species contained in the electrolyte. A Si3N4 layer was useful as an ion selective membrane for the InP open-gate FETs to improve the selectivity of H+ ions.
Rights: © 2009 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/42586
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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