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Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors

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タイトル: Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors
著者: Yoshizawa, Naoki 著作を一覧する
Sato, Taketomo 著作を一覧する
Hashizume, Tamotsu 著作を一覧する
発行日: 2009年 9月
出版者: Japan Society of Applied Physics
誌名: Japanese Journal of Applied Physics
巻: 48
号: 9
開始ページ: 091102
出版社 DOI: 10.1143/JJAP.48.091102
抄録: We prove with this paper that InP-based open-gate Field Effect Transistors (FETs) work well as liquid-phase chemical sensors. The open-gate FET clearly exhibited current saturation and a pinch-off behavior in the electrolyte, resulting in a rapid response to the gate bias applied via the electrolyte. A series of sensing measurements showed that the surface potential of the InP linearly changed with the pH values of the electrolytes in a pH range from 3.0 to 12.0. The pH sensitivity of the open-gate FETs depended on the ion species contained in the electrolyte. A Si3N4 layer was useful as an ion selective membrane for the InP open-gate FETs to improve the selectivity of H+ ions.
Rights: © 2009 The Japan Society of Applied Physics
資料タイプ: article (author version)
URI: http://hdl.handle.net/2115/42586
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 佐藤 威友

 

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