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Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells
Title: | Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells |
Authors: | Sato, Taketomo Browse this author →KAKEN DB | Yoshizawa, Naoki Browse this author | Hashizume, Tamotsu Browse this author |
Keywords: | Indium phosphide | Porous structure | Surface reflectance | Photoelectrochemical solar cell |
Issue Date: | 31-May-2010 |
Publisher: | Elsevier B.V. |
Journal Title: | Thin Solid Films |
Volume: | 518 |
Issue: | 15 |
Start Page: | 4399 |
End Page: | 4402 |
Publisher DOI: | 10.1016/j.tsf.2010.02.029 |
Abstract: | Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared ranges. Porous samples were electrochemically prepared on which 130-nm-diameter nanopores were formed in a straight, vertical direction and were laterally separated by 50-nm-thick InP nanowalls. The reflectance strongly depended on the surface morphology. The lowest reflectance of 0.1% in the visible light range was obtained after the irregular top layer had been completely removed. Superior photoelectrochemical properties were obtained on the InP porous structures due to two unique features: the large surface area inside pores, and the large photon absorption enhanced on the low reflectance surface. |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/43140 |
Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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