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Structure of GaAs(1̅ 1̅ 1̅ ) under Ga-rich conditions: A √19×√19 reconstruction model

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タイトル: Structure of GaAs(1̅ 1̅ 1̅ ) under Ga-rich conditions: A √19×√19 reconstruction model
著者: Koga, Hiroaki 著作を一覧する
キーワード: PACS=68.35.B-
発行日: 2010年 9月
出版者: American Physical Society
誌名: Physical review. B, Condensed matter and materials physics
巻: 82
号: 11
開始ページ: 113301-1
終了ページ: 113301-4
出版社 DOI: 10.1103/PhysRevB.82.113301
抄録: A GaAs(1̅ 1̅ 1̅ ) √19×√19 reconstruction model that is almost consistent with the electron-counting (EC) rule was developed. This model differs from earlier hexagonal-ring models by three As atoms surrounding the ring and an As atom filling its center. First-principles calculations found that the model is more stable than the earlier non-EC models and is consistent with the hexagonal-ring patterns observed by scanning-tunneling microscopy. The applicability of the EC rule was thus reconfirmed. The stacking fault energy of the reconstruction was also calculated and found to be much higher than that of the 2×2 reconstruction. The Ga-rich conditions that stabilize the √19×√19 reconstruction are therefore expected to suppress stacking faults in GaAs.
Rights: © 2010 American Physical Society
資料タイプ: article
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 古賀 裕明


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