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Evolution of pyramid morphology during InAs(001) homoepitaxy
| Title: | Evolution of pyramid morphology during InAs(001) homoepitaxy |
| Authors: | Babu, J. Bubesh Browse this author | | Yoh, Kanji Browse this author |
| Keywords: | atomic force microscopy | | desorption | | III-V semiconductors | | indium compounds | | molecular beam epitaxial growth | | semiconductor epitaxial layers | | semiconductor growth | | surface morphology | | surface reconstruction |
| Issue Date: | 16-Aug-2010 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 97 |
| Issue: | 7 |
| Start Page: | 072102 |
| Publisher DOI: | 10.1063/1.3481077 |
| Abstract: | Growth of InAs(001) homoepitaxial layer has been carried out especially at the bistable region, where the coexistence of both In-stabilized (4x2) and As-stabilized (2x4) surface reconstruction are found to be predominant. The observation of pyramid morphology in this bistable region is reported here. Atomic force microscopy studies have been performed on such pyramids. The heights of the observed pyramids vary from 12 to 26 nm with their bases from 3.6x1.2 to 18x6.3 μm2. Formation of such pyramids in the bistable region is attributed to the unique anomalous As-desorption observed during the surface reconstruction. |
| Rights: | Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 97, 072102 (2010) and may be found at https://dx.doi.org/10.1063/1.3481077 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/43844 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 陽 完治
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