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Evolution of pyramid morphology during InAs(001) homoepitaxy

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タイトル: Evolution of pyramid morphology during InAs(001) homoepitaxy
著者: Babu, J. Bubesh 著作を一覧する
Yoh, Kanji 著作を一覧する
キーワード: atomic force microscopy
III-V semiconductors
indium compounds
molecular beam epitaxial growth
semiconductor epitaxial layers
semiconductor growth
surface morphology
surface reconstruction
発行日: 2010年 8月16日
出版者: American Institute of Physics
誌名: Applied Physics Letters
巻: 97
号: 7
開始ページ: 072102
出版社 DOI: 10.1063/1.3481077
抄録: Growth of InAs(001) homoepitaxial layer has been carried out especially at the bistable region, where the coexistence of both In-stabilized (4x2) and As-stabilized (2x4) surface reconstruction are found to be predominant. The observation of pyramid morphology in this bistable region is reported here. Atomic force microscopy studies have been performed on such pyramids. The heights of the observed pyramids vary from 12 to 26 nm with their bases from 3.6x1.2 to 18x6.3 μm2. Formation of such pyramids in the bistable region is attributed to the unique anomalous As-desorption observed during the surface reconstruction.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 97, 072102 (2010) and may be found at
Relation (URI):
資料タイプ: article
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 陽 完治


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