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Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires

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Title: Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires
Authors: Hayashida, Atsushi Browse this author
Sato, Takuya Browse this author
Hara, Shinjiro Browse this author →KAKEN DB
Motohisa, Junichi Browse this author →KAKEN DB
Hiruma, Kenji Browse this author
Fukui, Takashi Browse this author →KAKEN DB
Keywords: Nanowire
Transmission electron microscopy
Metalorganic vapor phase epitaxy
Quantum wells
Issue Date: 1-Dec-2010
Publisher: Elsevier B.V.
Journal Title: Journal of Crystal Growth
Volume: 312
Issue: 24
Start Page: 3592
End Page: 3598
Publisher DOI: 10.1016/j.jcrysgro.2010.09.057
Abstract: We developed a growth method for forming a GaAs quantum well contained in an AlGaAs/GaAs heterostructure nanowire by using selective-area metal organic vapor phase epitaxy. To find the optimum growth condition of AlGaAs nanowires, we changed the growth temperature between 800 and 850℃ and found that best uniformity of the shape and the size was obtained near 800℃ but lateral growth of AlGaAs became larger, which resulted in a wide GaAs quantum well grown on the top (111)B facet of the AlGaAs nanowire. To form the GaAs quantum well with a reduced lateral size atop the AlGaAs nanowire, a GaAs core nanowire about 100 nm in diameter was grown before the AlGaAs growth, which reduced the lateral size of AlGaAs to roughly half compared with that without the GaAs core. Photoluminescence measurement at 4.2 K indicated spectral peaks of the GaAs quantum wells about 60 meV higher than the acceptor-related recombination emission peak of GaAs near 1.5 eV. The photoluminescence peak energy showed a blue shift of about 15 meV, from 1.546 to 1.560 eV, as the growth time of the GaAs quantum well was decreased from 8 to 3 sec. Transmission electron microscopy and energy dispersive X-ray analysis of an AlGaAs/GaAs heterostructure nanowire indicated a GaAs quantum well with a thickness of 5-20 nm buried along the <111> direction between the AlGaAs shells, showing a successful fabncation of the GaAs quantum well.
Type: article (author version)
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 比留間 健之

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