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Experimental proof-of-principle investigation of enhanced Z[sub 3D]T in (001) oriented Si/Ge superlattices

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Title: Experimental proof-of-principle investigation of enhanced Z[sub 3D]T in (001) oriented Si/Ge superlattices
Authors: Koga, T. Browse this author
Cronin, S. B. Browse this author
Dresselhaus, M. S. Browse this author
Liu, J. L. Browse this author
Wang, K. L. Browse this author
Keywords: Silicon
Germanium
Elemental semiconductors
Thermoelectricity
Thermal conductivity
Semiconductor superlattices
Issue Date: 4-Sep-2000
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 77
Issue: 10
Start Page: 1490
End Page: 1492
Publisher DOI: 10.1063/1.1308271
Abstract: An experimental proof-of-principle of an enhanced Z3DT (thermoelectric figure of merit) is demonstrated using (001) oriented Si/Ge superlattices. The highest value of the experimental Z3DT at 300 K for a (001) oriented Si(20 Å)/Ge(20 Å) superlattice is 0.1 using κ = 5 Wm−1 K−1, for the in-plane thermal conductivity, which is a factor of seven enhancement relative to the estimated value of Z3DT = 0.014 for bulk Si. The good agreement between experiment and theory validates our modeling approach (denoted as “carrier pocket engineering”) to design superlattices with enhanced values of Z3DT. Proposals are made to enhance the experimental values of Z3DT for Si/Ge superlattices even further. © 2000 American Institute of Physics.
Rights: Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 77, 1490 (2000) and may be found at https://dx.doi.org/10.1063/1.1308271
Type: article
URI: http://hdl.handle.net/2115/45769
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 古賀 貴亮

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