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Carrier pocket engineering to design superior thermoelectric materials using GaAs/AlAs superlattices

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/45770

Title: Carrier pocket engineering to design superior thermoelectric materials using GaAs/AlAs superlattices
Authors: Koga, T. Browse this author
Sun, X. Browse this author
Cronin, S. B. Browse this author
Dresselhaus, M. S. Browse this author
Keywords: Gallium arsenide
Aluminium compounds
III-V semiconductors
Semiconductor superlattices
Semiconductor quantum wells
Carrier density
Thermoelectricity
Seebeck effect
Brillouin zones
Issue Date: 16-Nov-1998
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 73
Issue: 20
Start Page: 2950
End Page: 2952
Publisher DOI: 10.1063/1.122640
Abstract: A large enhancement in the thermoelectric figure of merit for the whole superlattice, Z3DT, is predicted for short-period GaAs/AlAs superlattices relative to bulk GaAs. Various superlattice parameters (superlattice growth direction, superlattice period, and layer thicknesses) are explored to optimize Z3DT, including quantum well states formed from carrier pockets at various high symmetry points in the Brillouin zone. The highest room-temperature Z3DT obtained in the present calculation is 0.41 at the optimum carrier concentration for either (001)- or (111)-oriented GaAs (20 Å)/AlAs (20 Å) superlattices, which is about 50 times greater than the corresponding ZT for bulk GaAs. © 1998 American Institute of Physics.
Rights: Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 73, 2950 (1998) and may be found at https://dx.doi.org/10.1063/1.122640
Type: article
URI: http://hdl.handle.net/2115/45770
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 古賀 貴亮

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