|
Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >
Gate voltage dependence of a single-electron transistor using the shuttle mechanism
| Title: | Gate voltage dependence of a single-electron transistor using the shuttle mechanism |
| Authors: | Nishiguchi, Norihiko Browse this author →KAKEN DB |
| Issue Date: | Dec-2001 |
| Publisher: | American Physical Society |
| Journal Title: | Physical Review B |
| Volume: | 65 |
| Issue: | 3 |
| Start Page: | 035403 |
| Publisher DOI: | 10.1103/PhysRevB.65.035403 |
| Abstract: | The gate voltage dependence of a single-electron transistor using the shuttle mechanism in which a vibrating conductive nanoparticle carries charges between the electrodes is studied theoretically and with numerical simulations. Two types of gate voltage effect on the transport properties are demonstrated: one is direct modulation of the current via modification in the tunneling rate, giving rise to shift of ] I/]V peaks on the step-like current, splitting of the current steps and periodic behavior of the current with the change in gate voltage. Another is an indirect effect due to a shift in the range of the nanoparticle vibration induced by the gate voltage. The latter effect stops the shuttle mechanism at a large gate voltage, leading to the conduction gap which widens in proportion to the gate voltage. |
| Rights: | © 2001 The American Physical Society |
| Type: | article |
| URI: | http://hdl.handle.net/2115/47086 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 西口 規彦
|
