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High-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/48115

Title: High-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers
Authors: Akazawa, Masamichi Browse this author →KAKEN DB
Hasegawa, Hideki Browse this author
Keywords: Al2O3
MIS
Si ICL
GaAs
InGaAs
hydrofluoric acid
Issue Date: 15-Jul-2010
Publisher: Elsevier B.V.
Journal Title: Applied Surface Science
Volume: 256
Issue: 19
Start Page: 5708
End Page: 5713
Publisher DOI: 10.1016/j.apsusc.2010.03.087
Abstract: This paper attempts to realize unpinned high-k insulator-semiconductor interfaces on air-exposed GaAs and In0.53Ga0.47As by using the Si interface control layer (Si ICL). Al2O3 was deposited by ex-situ atomic layer deposition (ALD) as the high-k insulator. By applying an optimal chemical treatment using HF acid combined with subsequent thermal cleaning below 500℃ in UHV, interface bonding configurations similar to those by in-situ UHV process was achieved both for GaAs and InGaAs after MBE growth of the Si ICL with no trace of residual native oxide components. As compared with the MIS structures without Si ICL, insertion of Si ICL improved the electrical interface quality a great deal both for GaAs and InGaAs, reducing frequency dispersion of capacitance, hysteresis effects and interface state density (Dit). A minimum value of Dit of 2x10^[11] eV^[-1]cm^[-2] was achieved both for GaAs and InGaAs. However, the range of bias induced surface potential excursion within the band gap was different, making formation of electron layer by surface inversion possible in InGaAs, but not possible in GaAs. The difference was explained by the disorder induced gap state (DIGS) model.
Type: article (author version)
URI: http://hdl.handle.net/2115/48115
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 赤澤 正道

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