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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >
Phonon Effects on Electric and Thermal Properties in a Single Electron Transistor
| Title: | Phonon Effects on Electric and Thermal Properties in a Single Electron Transistor |
| Authors: | Nishiguchi, Norihiko Browse this author →KAKEN DB | | Wybourne, Martin N. Browse this author |
| Issue Date: | Feb-2011 |
| Publisher: | The Physicsal Society of Republic of China |
| Journal Title: | Chinese Journal of Physics |
| Volume: | 49 |
| Issue: | 1 |
| Start Page: | 221 |
| End Page: | 230 |
| Abstract: | We investigate the effects on the transport characteristics of a single electron transistor caused by dynamic deformations of the device configuration due to phonons. We formulate the electron-phonon interaction that originates from changes in capacitances and tunnel resistances caused by the breathing and oblong vibrations of the island that forms part of the transistor. We derive transport properties by means of the master equation. For a single electron transistor with a gold nanoparticle island with a radius of 1 nm, we demonstrate the contribution to the transport properties that originates from tunneling channels associated with THz phonon emission and absorption. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/48263 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 西口 規彦
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