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Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching

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タイトル: Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching
著者: Sato, Taketomo 著作を一覧する
Yoshizawa, Naoki 著作を一覧する
Okazaki, Hiroyuki 著作を一覧する
Hashizume, Tamotsu 著作を一覧する
発行日: 2010年
出版者: The Electrochemical Society
誌名: ECS Transactions
巻: 25
号: 42
開始ページ: 83
終了ページ: 88
出版社 DOI: 10.1149/1.3416205
抄録: Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared light ranges. The reflectance strongly depended on the surface morphology of the porous structures prepared by the electrochemical process, and the lowest reflectance of 0.1% in the visible light range was obtained from a sample after the irregular top layer was completely removed. Large anodic photocurrents were obtained on the InP porous structures that had low reflectance surfaces with deeper pores.
Rights: © The Electrochemical Society, Inc. 2010. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Trans., 25(42), pp. 83-88.
資料タイプ: article
URI: http://hdl.handle.net/2115/48288
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 佐藤 威友

 

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