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Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching

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Title: Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching
Authors: Sato, Taketomo Browse this author →KAKEN DB
Yoshizawa, Naoki Browse this author
Okazaki, Hiroyuki Browse this author
Hashizume, Tamotsu Browse this author
Issue Date: 2010
Publisher: The Electrochemical Society
Journal Title: ECS Transactions
Volume: 25
Issue: 42
Start Page: 83
End Page: 88
Publisher DOI: 10.1149/1.3416205
Abstract: Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared light ranges. The reflectance strongly depended on the surface morphology of the porous structures prepared by the electrochemical process, and the lowest reflectance of 0.1% in the visible light range was obtained from a sample after the irregular top layer was completely removed. Large anodic photocurrents were obtained on the InP porous structures that had low reflectance surfaces with deeper pores.
Rights: © The Electrochemical Society, Inc. 2010. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Trans., 25(42), pp. 83-88.
Type: article
URI: http://hdl.handle.net/2115/48288
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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