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Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrate

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Title: Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrate
Authors: Kim, Hyo Jin Browse this author
Mothohisa, Junichi Browse this author
Fukui, Takashi Browse this author →KAKEN DB
Issue Date: 6-Feb-2012
Publisher: Springer
Journal Title: Nanoscale Research Letters
Volume: 7
Start Page: 104
Publisher DOI: 10.1186/1556-276X-7-104
Abstract: The optical properties of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on GaAs wire structures formed by utilizing SiO2-patterned exact and 5°-off (001) GaAs substrates have been studied with micro-photoluminescence (μ-PL). Single PL peak was occurred for In0.8Ga0.2As SAQDs grown on SiO2-patterned exact (001) GaAs, whereas double PL peaks were showed for SAQDs grown on 5°-off (001) GaAs substrates as the width of the opening windows increased. The power-dependent μ-PL spectra show that the first and second peaks of these double peaks were originated from the well-defined ground and excited state, respectively. These results demonstrated that In0.8Ga0.2As SAQDs selectively grown by utilizing SiO2-patterned 5°-off (001) GaAs substrates have well-defined zero-dimensional quantum states.
Rights: http://creativecommons.org/licenses/by/2.0
Type: article
URI: http://hdl.handle.net/2115/49093
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 福井 孝志

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