Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrate


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/49093

Title:	Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrate
Authors:	Kim, Hyo Jin Browse this author
	Mothohisa, Junichi Browse this author
	Fukui, Takashi Browse this author →KAKEN DB
Issue Date:	6-Feb-2012
Publisher:	Springer
Journal Title:	Nanoscale Research Letters
Volume:	7
Start Page:	104
Publisher DOI:	10.1186/1556-276X-7-104
Abstract:	The optical properties of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on GaAs wire structures formed by utilizing SiO2-patterned exact and 5°-off (001) GaAs substrates have been studied with micro-photoluminescence (μ-PL). Single PL peak was occurred for In0.8Ga0.2As SAQDs grown on SiO2-patterned exact (001) GaAs, whereas double PL peaks were showed for SAQDs grown on 5°-off (001) GaAs substrates as the width of the opening windows increased. The power-dependent μ-PL spectra show that the first and second peaks of these double peaks were originated from the well-defined ground and excited state, respectively. These results demonstrated that In0.8Ga0.2As SAQDs selectively grown by utilizing SiO2-patterned 5°-off (001) GaAs substrates have well-defined zero-dimensional quantum states.
Rights:	http://creativecommons.org/licenses/by/2.0
Type:	article
URI:	http://hdl.handle.net/2115/49093
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 福井孝志

OAI-PMH ( junii2 , jpcoar_1.0 )

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