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Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy

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Title: Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy
Authors: Akazawa, M. Browse this author
Matsuyama, T. Browse this author
Hashizume, T. Browse this author
Hiroki, M. Browse this author
Yamahata, S. Browse this author
Shigekawa, N. Browse this author
Keywords: aluminium compounds
atomic force microscopy
binding energy
conduction bands
gallium compounds
III-V semiconductors
indium compounds
MOCVD
semiconductor epitaxial layers
semiconductor growth
semiconductor heterojunctions
valence bands
vapour phase epitaxial growth
wide band gap semiconductors
X-ray photoelectron spectra
Issue Date: 29-Mar-2010
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 96
Issue: 13
Start Page: 132104
Publisher DOI: 10.1063/1.3368689
Abstract: The valence-band offset of a lattice-matched In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy (MOVPE) was investigated by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy and angle-resolved XPS indicated that a thin In0.17Al0.83N (2.5 nm) layer was successfully grown by MOVPE on GaN. The XPS result showed that the valence band offset was 0.2 ± 0.3 eV. This result indicates that the conduction-band offset at the In0.17Al0.83N/GaN interface is large, i.e., 0.9 to 1.0 eV, and occupies a large part of the entire band discontinuity.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 96, 132104 (2010) and may be found at http://link.aip.org/link/?apl/96/132104
Relation URI: http://link.aip.org/link/?apl/96/132104
Type: article
URI: http://hdl.handle.net/2115/49528
Appears in Collections:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 赤澤 正道

 

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