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Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy
| Title: | Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy |
| Authors: | Akazawa, M. Browse this author →KAKEN DB | | Matsuyama, T. Browse this author | | Hashizume, T. Browse this author | | Hiroki, M. Browse this author | | Yamahata, S. Browse this author | | Shigekawa, N. Browse this author |
| Keywords: | aluminium compounds | | atomic force microscopy | | binding energy | | conduction bands | | gallium compounds | | III-V semiconductors | | indium compounds | | MOCVD | | semiconductor epitaxial layers | | semiconductor growth | | semiconductor heterojunctions | | valence bands | | vapour phase epitaxial growth | | wide band gap semiconductors | | X-ray photoelectron spectra |
| Issue Date: | 29-Mar-2010 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 96 |
| Issue: | 13 |
| Start Page: | 132104 |
| Publisher DOI: | 10.1063/1.3368689 |
| Abstract: | The valence-band offset of a lattice-matched In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy (MOVPE) was investigated by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy and angle-resolved XPS indicated that a thin In0.17Al0.83N (2.5 nm) layer was successfully grown by MOVPE on GaN. The XPS result showed that the valence band offset was 0.2 ± 0.3 eV. This result indicates that the conduction-band offset at the In0.17Al0.83N/GaN interface is large, i.e., 0.9 to 1.0 eV, and occupies a large part of the entire band discontinuity. |
| Rights: | Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 96, 132104 (2010) and may be found at https://dx.doi.org/10.1063/1.3368689 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/49528 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 赤澤 正道
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