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Fabrication of double-dot single-electron transistor in silicon nanowire

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/49548

Title: Fabrication of double-dot single-electron transistor in silicon nanowire
Authors: Jo, Mingyu Browse this author
Kaizawa, Takuya Browse this author
Arita, Masashi Browse this author →KAKEN DB
Fujiwara, Akira Browse this author
Ono, Yukinori Browse this author
Inokawa, Hiroshi Browse this author
Choi, Jung-Bum Browse this author
Takahashi, Yasuo Browse this author →KAKEN DB
Keywords: Quantum dots
Coulomb blockade
single-electron tunneling
double-dot SETs
Issue Date: 1-Jan-2010
Publisher: Elsevier B.V.
Journal Title: Thin Solid Films
Volume: 518
Issue: 6, Supp. 1
Start Page: S186
End Page: S189
Publisher DOI: 10.1016/j.tsf.2009.10.085
Abstract: We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.
Type: article (author version)
URI: http://hdl.handle.net/2115/49548
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 高橋 庸夫

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