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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Information Science and Technology / Faculty of Information Science and Technology >
Peer-reviewed Journal Articles, etc >
Fabrication of double-dot single-electron transistor in silicon nanowire
| Title: | Fabrication of double-dot single-electron transistor in silicon nanowire |
| Authors: | Jo, Mingyu Browse this author | | Kaizawa, Takuya Browse this author | | Arita, Masashi Browse this author →KAKEN DB | | Fujiwara, Akira Browse this author | | Ono, Yukinori Browse this author | | Inokawa, Hiroshi Browse this author | | Choi, Jung-Bum Browse this author | | Takahashi, Yasuo Browse this author →KAKEN DB |
| Keywords: | Quantum dots | | Coulomb blockade | | single-electron tunneling | | double-dot SETs |
| Issue Date: | 1-Jan-2010 |
| Publisher: | Elsevier B.V. |
| Journal Title: | Thin Solid Films |
| Volume: | 518 |
| Issue: | 6, Supp. 1 |
| Start Page: | S186 |
| End Page: | S189 |
| Publisher DOI: | 10.1016/j.tsf.2009.10.085 |
| Abstract: | We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/49548 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 高橋 庸夫
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