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Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/49549

Title: Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature
Authors: Shin, S. J. Browse this author
Jung, C. S. Browse this author
Park, B. J. Browse this author
Yoon, T. K. Browse this author
Lee, J. J. Browse this author
Kim, S. J. Browse this author
Choi, J. B. Browse this author
Takahashi, Y. Browse this author →KAKEN DB
Hasko, D. G. Browse this author
Keywords: Coulomb blockade
diamond
island structure
single electron transistors
Issue Date: 6-Sep-2010
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 97
Issue: 10
Start Page: 103101
Publisher DOI: 10.1063/1.3483618
Abstract: An ultrasmall single-electron transistor has been made by scaling the size of a fin field-effect transistor structure down to an ultimate limiting form, resulting in the reliable formation of a sub-5 nm Coulomb island. The charge stability data feature the first exhibition of three and a half clear Coulomb diamonds at 300 K, each showing a high peak-to-valley current ratio. Its charging energy is estimated to be more than one order magnitude larger than the thermal energy at room-temperature. The hybrid literal gate integrated by this single-electron transistor combined with a field-effect transistor displays >5 bit multiswitching behavior at 300 K with a large voltage swing of ~1 V.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 97, 103101 (2010) and may be found at https://dx.doi.org/10.1063/1.3483618
Type: article
URI: http://hdl.handle.net/2115/49549
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 高橋 庸夫

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