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Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure
| Title: | Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure |
| Authors: | Jinbo, Ryohei Browse this author | | Kudo, Tomohito Browse this author | | Yatabe, Zenji Browse this author | | Sato, Taketomo Browse this author →KAKEN DB |
| Keywords: | Photoelectric conversion | | Porous structure | | Indium phosphide (InP) | | Platinum | | Electrochemical process | | Scanning electron microscopy | | Optical Reflectance | | Current-voltage measurements | | Electrochemical method | | Current-voltage (I-V) | | SEM |
| Issue Date: | 30-Jun-2012 |
| Publisher: | Elsevier B.V. |
| Journal Title: | Thin Solid Films |
| Volume: | 520 |
| Issue: | 17 |
| Start Page: | 5710 |
| End Page: | 5714 |
| Publisher DOI: | 10.1016/j.tsf.2012.04.031 |
| Abstract: | A photoelectric-conversion device-based on an InP porous structure utilizing the large surface area inside pores and the low reflectance on the porous surface-is proposed. The InP walls inside the pores are covered with thin platinum films that form a Schottky barrier yielding an electric field that separates photo carriers generated under illumination. The coverage of the platinum film and its optical reflectance depended largely on the surface morphology of the porous structure. Removal of the irregular top layer formed at the initial stage of the pore formation effectively improved the coverage of the platinum film, which showed a very low optical reflectance (i.e., below 3.2%). According to current-voltage measurements under illumination, the platinum/porous InP showed larger photocurrents and higher responsivity than those of a reference planar sample. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/49673 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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