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Heteroepitaxial growth of CdTe on a p-Si(111) substrate by pulsed-light-assisted electrodeposition

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Title: Heteroepitaxial growth of CdTe on a p-Si(111) substrate by pulsed-light-assisted electrodeposition
Authors: Takahashi, Makoto Browse this author
Todorobaru, Makoto Browse this author
Wakita, Koichi Browse this author
Uosaki, Kohei Browse this author →KAKEN DB
Keywords: cadmium compounds
II-VI semiconductors
semiconductor epitaxial layers
semiconductor growth
pulsed laser deposition
liquid phase epitaxial growth
atomic force microscopy
surface states
surface structure
Issue Date: 25-Mar-2002
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 80
Issue: 12
Start Page: 2117
End Page: 2119
Publisher DOI: 10.1063/1.1463718
Abstract: Highly oriented CdTe(111) films of high-crystalline quality were grown on a Si(111) substrate by pulsed-light-assisted electrodeposition at room temperature. Strong photoluminescence peaks due to the bound exciton recombination were observed for the electrodeposited CdTe films, confirming the high quality of the films prepared by the present method. Atomic-force microscopy measurements showed an atomically ordered arrangement and demonstrated the epitaxial growth of the CdTe films.
Rights: Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 80, 2117 (2002) and may be found at
Type: article
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 魚崎 浩平

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