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Heteroepitaxial growth of CdTe on a p-Si(111) substrate by pulsed-light-assisted electrodeposition
| Title: | Heteroepitaxial growth of CdTe on a p-Si(111) substrate by pulsed-light-assisted electrodeposition |
| Authors: | Takahashi, Makoto Browse this author | | Todorobaru, Makoto Browse this author | | Wakita, Koichi Browse this author | | Uosaki, Kohei Browse this author →KAKEN DB |
| Keywords: | cadmium compounds | | II-VI semiconductors | | semiconductor epitaxial layers | | semiconductor growth | | pulsed laser deposition | | electrodeposits | | liquid phase epitaxial growth | | photoluminescence | | atomic force microscopy | | excitons | | surface states | | surface structure |
| Issue Date: | 25-Mar-2002 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 80 |
| Issue: | 12 |
| Start Page: | 2117 |
| End Page: | 2119 |
| Publisher DOI: | 10.1063/1.1463718 |
| Abstract: | Highly oriented CdTe(111) films of high-crystalline quality were grown on a Si(111) substrate by pulsed-light-assisted electrodeposition at room temperature. Strong photoluminescence peaks due to the bound exciton recombination were observed for the electrodeposited CdTe films, confirming the high quality of the films prepared by the present method. Atomic-force microscopy measurements showed an atomically ordered arrangement and demonstrated the epitaxial growth of the CdTe films. |
| Rights: | Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 80, 2117 (2002) and may be found at https://dx.doi.org/10.1063/1.1463718 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/50230 |
| Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 魚崎 浩平
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