|
Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Science / Faculty of Science >
Peer-reviewed Journal Articles, etc >
Attenuated total reflection Fourier transform infrared spectroscopy study of the adsorption of organic contaminants on a hydrogen-terminated Si(111) surface in air
| Title: | Attenuated total reflection Fourier transform infrared spectroscopy study of the adsorption of organic contaminants on a hydrogen-terminated Si(111) surface in air |
| Authors: | Ye, Shen Browse this author | | Ichihara, Taro Browse this author | | Uosaki, Kohei Browse this author →KAKEN DB |
| Keywords: | silicon | | adsorption | | surface contamination | | attenuated total reflection | | infrared spectra | | spectrochemical analysis | | Fourier transform spectra | | hydrogen | | spectral line intensity | | elemental semiconductors |
| Issue Date: | 13-Sep-1999 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 75 |
| Issue: | 11 |
| Start Page: | 1562 |
| End Page: | 1564 |
| Publisher DOI: | 10.1063/1.124755 |
| Abstract: | The adsorption of organic contaminants on a hydrogen-terminated Si(111) surface was investigated using attenuated total reflection Fourier transform infrared spectroscopy. When the hydrogen-terminated Si(111) surface was exposed to dry air, the sharp Si-H monohydride peak became weaker and a broad component became visible in the lower wave-number region. Furthermore, a number of bands within the C-H stretching region were observed. The intensity of the sharp Si-H band was recovered to a certain extent and those of the broad component and the C-H bands decreased after the sample was rinsed in hexane. These results suggest that the contamination by organic adsorbates is not accompanied by a chemical bond formation. |
| Rights: | Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 75, 1562 (1999) and may be found at https://dx.doi.org/10.1063/1.124755 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/50239 |
| Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 魚崎 浩平
|
