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The Rate of the Photoelectrochemical Generation of Hydrogen at p-Type Semiconductors

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Title: The Rate of the Photoelectrochemical Generation of Hydrogen at p-Type Semiconductors
Authors: Bockris, J. O'M. Browse this author
Uosaki, K. Browse this author →KAKEN DB
Keywords: electrolysis
photoelectrochemistry
hydrogen
photocathodes
II-VI semiconductors
III-V semiconductors
silicon
silicon compounds
carbon compounds
electric properties
visible spectra
semiconductor-electrolyte boundaries
pH
hydrogen production
photoelectrochemical reaction
p-type semiconductors
photocathodes
Issue Date: 1977
Publisher: The Electrochemical Society
Journal Title: Journal of The Electrochemical Society
Volume: 124
Issue: 9
Start Page: 1348
End Page: 1355
Publisher DOI: 10.1149/1.2133652
Abstract: The current-potential relations with and without illumination, quantum efficiency-wavelength relations at several potentials, the flatband potentials, the transient behavior, and the stability of seven p-type semiconductors, i.e., ZnTe, CdTe, GaAs, InP, GaP, SiC, and Si, have been measured in 1N NaOH and 1N H2SO4. The position of the photocurrent-potential relations are related to the flatband potential and the energy gap of the semiconductor. The existence of the maximum in quantum efficiency-wavelength relation is analyzed by considering surface recombination. The stability and the transient behavior are analyzed.
Rights: © The Electrochemical Society, Inc. 1977. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc. 1977 volume 124, issue 9, 1348-1355.
Type: article
URI: http://hdl.handle.net/2115/50261
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 魚崎 浩平

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