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気体オゾンによる金属・半導体材料表面の高酸化状態形成
| Title: | 気体オゾンによる金属・半導体材料表面の高酸化状態形成 |
| Other Titles: | High oxidation of the metals and semiconductors surfaces by gaseous ozone |
| Authors: | 鈴木, 亮輔1 Browse this author →KAKEN DB |
| Authors(alt): | Suzuki, Ryosuke O.1 |
| Keywords: | ozone | | peroxide | | oxide | | oxidation | | superconductor | | thermodynamics | | surface | | ceramics | | silver | | chromium | | tantalum | | silicon |
| Issue Date: | 2005 |
| Publisher: | 応用物理学会 |
| Journal Title: | 応用物理 |
| Volume: | 74 |
| Issue: | 1 |
| Start Page: | 37 |
| End Page: | 41 |
| Abstract: | オゾンの性質や取扱上の注意点、歴史的な応用例について概説し、高濃度オゾンガスの金属、酸化物セラミックス、半導体等への最近の応用例について述べた。オゾンの熱力学データからオゾンのもつ酸素換算の極めて高い酸化力を定量化し、高温でのオゾン分解速度と材料内部での酸素拡散速度の兼ね合いによって材料表面に過酸化物を形成する可能性があることを示した。例えば純酸素中では生じることのないAgOがオゾンガスによって形成可能であるが、Ag2O3は生成しない。誘電体酸化タンタル皮膜形成や過酸化クロムによる酸化防止皮膜生成、薄膜の酸化処理例としてSiや超伝導酸化物等の機能性酸化物膜の生成、等の応用を例示した。 | | Properties of gaseous ozone are reviewed with its handling notes and historical applications, and some recent applications to the metals, oxide ceramics and semiconductors are introduced. Oxidation ability of ozone can be quantified from thermodynamics, and the decomposition rate at high temperatures and oxygen diffusion in the materials delays the peroxides formation by ozone. For example, AgO that can not be formed in pure oxygen could be formed in ozone gas, but Ag2O3 is not synthesized even in ozone. Some examples of ozone application are shown in Ta capacitors, oxidation resistant film by Cr peroxides, the thin oxide film on Si, and the oxidation for the functional oxides such as superconductors. |
| Rights: | © 2005 応用物理学会 |
| Relation: | http://www.jsap.or.jp/ap/2005/ob7401/p740037.html |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/50305 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 鈴木 亮輔
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