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Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition

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タイトル: Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition
著者: Akazawa, M. 著作を一覧する
Nakano, T. 著作を一覧する
キーワード: aluminium compounds
atomic layer deposition
core levels
III-V semiconductors
indium compounds
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
発行日: 2012年 9月17日
出版者: American Institute of Physics
誌名: Applied Physics Letters
巻: 101
号: 12
開始ページ: 122110
出版社 DOI: 10.1063/1.4754141
抄録: The valence band offset, ΔE_[V], at an Al2O3/In0.17Al0.83N interface formed by atomic layer deposition was measured by x-ray photoelectron spectroscopy. The conventional method of using the core level separation, ΔE_[CL], between O 1s and In 4d resulted in ΔE_[V] = 1.3 eV, which was apparently consistent with the direct observation of the valence band edge varying the photoelectron exit angle, θ. However, ΔE_[CL] and full width at half maximum of core-level spectra were dependent on θ, which indicated significant potential gradients in Al2O3 and InAlN layers. An actual ΔE_[V] of 1.2 eV was obtained considering the potential gradients.
Rights: Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 122110 (2012) and may be found at
資料タイプ: article
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 赤澤 正道


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