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Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition
| Title: | Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition |
| Authors: | Akazawa, M. Browse this author →KAKEN DB | | Nakano, T. Browse this author |
| Keywords: | aluminium compounds | | atomic layer deposition | | core levels | | III-V semiconductors | | indium compounds | | valence bands | | wide band gap semiconductors | | X-ray photoelectron spectra |
| Issue Date: | 17-Sep-2012 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 101 |
| Issue: | 12 |
| Start Page: | 122110 |
| Publisher DOI: | 10.1063/1.4754141 |
| Abstract: | The valence band offset, ΔE_[V], at an Al2O3/In0.17Al0.83N interface formed by atomic layer deposition was measured by x-ray photoelectron spectroscopy. The conventional method of using the core level separation, ΔE_[CL], between O 1s and In 4d resulted in ΔE_[V] = 1.3 eV, which was apparently consistent with the direct observation of the valence band edge varying the photoelectron exit angle, θ. However, ΔE_[CL] and full width at half maximum of core-level spectra were dependent on θ, which indicated significant potential gradients in Al2O3 and InAlN layers. An actual ΔE_[V] of 1.2 eV was obtained considering the potential gradients. |
| Rights: | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 122110 (2012) and may be found at https://dx.doi.org/10.1063/1.4754141 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/50407 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 赤澤 正道
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