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High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin film

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Title: High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin film
Authors: Marukame, Takao Browse this author
Ishikawa, Takayuki Browse this author
Matsuda, Ken-Ichi Browse this author →KAKEN DB
Uemura, Tetsuya Browse this author →KAKEN DB
Yamamoto, Masafumi Browse this author →KAKEN DB
Issue Date: 28-Jun-2006
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 88
Issue: 26
Start Page: 262503
Publisher DOI: 10.1063/1.2217166
Abstract: Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film, whose composition was close to the stoichiometric one, and a MgO tunnel barrier. Cross-sectional high-resolution transmission electron microscope observations indicated that all layers of the CCFA/MgO/Co50Fe50 MTJ layer structure were grown epitaxially and were single crystalline. The microfabricated CCFA/MgO/Co50Fe50 MTJs exhibited high tunnel magnetoresistance (TMR) ratios of 90% at room temperature and 240% at 4.2 K. A high tunneling spin polarization of 0.79 at 4.2 K was obtained for the epitaxial CCFA films from the TMR ratios.
Rights: Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 88, 262503 and may be found at https://dx.doi.org/10.1063/1.2217166
Type: article
URI: http://hdl.handle.net/2115/50607
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 山本 眞史

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