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Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co2MnGe and a MgO tunnel barrier

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Title: Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co2MnGe and a MgO tunnel barrier
Authors: Hakamata, Shinya Browse this author
Ishikawa, Takayuki Browse this author
Marukame, Takao Browse this author
Matsuda, Ken-Ichi Browse this author →KAKEN DB
Uemura, Tetsuya Browse this author →KAKEN DB
Arita, Masashi Browse this author
Yamamoto, Masafumi Browse this author →KAKEN DB
Issue Date: 9-May-2007
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 101
Issue: 9
Start Page: 09J513
Publisher DOI: 10.1063/1.2713209
Abstract: We fabricated magnetic tunnel junctions (MTJs) with a Co-based full-Heusler alloy thin film of Co2MnGe (CMG) and a MgO tunnel barrier. The microfabricated MTJs with a Co-rich CMG film showed relatively high tunnel magnetoresistance ratios of 83% at room temperature and 185% at 4.2 K. These values are much higher than those previously obtained for CMG/MgO MTJs with a Co-deficient CMG film.
Rights: Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 101, 09J513 (2007) and may be found at https://dx.doi.org/10.1063/1.2713209
Type: article
URI: http://hdl.handle.net/2115/50615
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 山本 眞史

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