Three-valued magnetic tunnel junction for nonvolatile ternary content addressable memory application


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/50623

Title:	Three-valued magnetic tunnel junction for nonvolatile ternary content addressable memory application
Authors:	Uemura, Tetsuya Browse this author →KAKEN DB
Authors:	Yamamoto, Masafumi Browse this author →KAKEN DB
Issue Date:	23-Dec-2008
Publisher:	American Institute of Physics
Journal Title:	Journal of Applied Physics
Volume:	104
Issue:	12
Start Page:	123911
Publisher DOI:	10.1063/1.3054174
Rights:	Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 104, 123911 (2008) and may be found at https://dx.doi.org/10.1063/1.3054174
Type:	article
URI:	http://hdl.handle.net/2115/50623
Appears in Collections:	情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 山本眞史

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