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Electric Double Layer Gate Field-Effect Transistors Based on Si

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Title: Electric Double Layer Gate Field-Effect Transistors Based on Si
Authors: Yanase, Takashi Browse this author
Shimada, Toshihiro Browse this author →KAKEN DB
Hasegawa, Tetsuya Browse this author
Issue Date: Apr-2010
Publisher: The Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics
Volume: 49
Issue: 4
Start Page: 04DK06
Publisher DOI: 10.1143/JJAP.49.04DK06
Abstract: Electric double layer field-effect transistors (EDL-FETs) were fabricated using single crystal Si wafer as the active semiconductor and various characteristics were studied including dynamic response against step-function gate bias. The static FET mobility was more than 100 cm2 V-1 s-1. The response time of the drain current was 20 µs for ionic liquid and 3 ms for poly(ethylene glycol) (PEG) solution of LiBF4. Unexpected fast response was observed at a certain “speed up bias” condition. This effect will be useful to switching circuits using EDL-FETs.
Rights: © 2010 The Japan Society of Applied Physics
Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 島田 敏宏

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