Electric Double Layer Gate Field-Effect Transistors Based on Si


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/51904

Title:	Electric Double Layer Gate Field-Effect Transistors Based on Si
Authors:	Yanase, Takashi Browse this author
	Shimada, Toshihiro Browse this author →KAKEN DB
	Hasegawa, Tetsuya Browse this author
Issue Date:	Apr-2010
Publisher:	The Japan Society of Applied Physics
Journal Title:	Japanese Journal of Applied Physics
Volume:	49
Issue:	4
Start Page:	04DK06
Publisher DOI:	10.1143/JJAP.49.04DK06
Abstract:	Electric double layer field-effect transistors (EDL-FETs) were fabricated using single crystal Si wafer as the active semiconductor and various characteristics were studied including dynamic response against step-function gate bias. The static FET mobility was more than 100 cm2 V-1 s-1. The response time of the drain current was 20 µs for ionic liquid and 3 ms for poly(ethylene glycol) (PEG) solution of LiBF4. Unexpected fast response was observed at a certain “speed up bias” condition. This effect will be useful to switching circuits using EDL-FETs.
Rights:	© 2010 The Japan Society of Applied Physics
Relation:	http://jjap.jsap.jp/link?JJAP/49/04DK06/cite
Type:	article (author version)
URI:	http://hdl.handle.net/2115/51904
Appears in Collections:	工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 島田敏宏

OAI-PMH ( junii2 , jpcoar_1.0 )

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