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Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment
| Title: | Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment |
| Authors: | Nakano, Takuma Browse this author | | Akazawa, Masamichi Browse this author →KAKEN DB |
| Keywords: | InAlN | | XPS | | surface treatment | | HF | | native oxide |
| Issue Date: | May-2013 |
| Publisher: | IEICE-Inst Electronics Information Communications Eng |
| Journal Title: | IEICE Transactions On Electronics |
| Volume: | E96C |
| Issue: | 5 |
| Start Page: | 686 |
| End Page: | 689 |
| Publisher DOI: | 10.1587/transele.E96.C.686 |
| Abstract: | We investigated the effects of chemical treatments for removing native oxide layers on InAlN surfaces by X-ray photoelectron spectroscopy (XPS). The untreated surface of the air exposed InAlN layer was covered with the native oxide layer mainly composed of hydroxides. Hydrochloric acid treatment and ammonium hydroxide treatment were not efficient for removing the native oxide layer even after immersion for 15 min, while hydrofluoric acid (HF) treatment led to a removal in a short treatment time of 1 min. After the HF treatment, the surface was prevented from reoxidation in air for 1 h. We also found that the 5-min buffered HE treatment had almost the same effect as the 1-min HF treatment. Finally, an attempt was made to apply the HF-based treatment to the metal-InAlN contact to confirm the XPS results. |
| Rights: | copyright©2013 IEICE |
| Relation: | http://search.ieice.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/53049 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 赤澤 正道
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