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Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices

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Title: Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices
Authors: Kumazaki, Yusuke Browse this author
Kudo, Tomohito Browse this author
Yatabe, Zenji Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Keywords: Porous structure
Indium phosphide (InP)
Optical absorption property
Photoelectric conversion device
Issue Date: 15-Aug-2013
Publisher: Elsevier Science Bv
Journal Title: Applied Surface Science
Volume: 279
Start Page: 116
End Page: 120
Publisher DOI: 10.1016/j.apsusc.2013.04.046
Abstract: We investigated the optical absorption properties of InP porous structures formed by the electrochemical process using photoelectric conversion (PC) devices formed on p-n junction substrates. The photocurrent measurements revealed that the current from PC devices changed in response to the incident light power and the thickness of the top layer on the p-n interface. Since the photocarriers contributing to the observed photocurrents are excited by the photons reaching the p-n interface through the top layer, the photocurrents give us information on the optical absorption properties of the top layer. The photocurrents observed on a porous device with a porous structure in the top layer were lower than that of a non-porous device, indicating that the absorption properties of InP were enhanced after the formation of porous structures. This phenomenon can be explained in terms of absorption coefficient, α, increased by the light scattering and the sub-bandgap absorption in the porous layer. (C) 2013 Elsevier B.V. All rights reserved.
Type: article (author version)
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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