Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >
Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices
Title: | Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices |
Authors: | Kumazaki, Yusuke Browse this author | Kudo, Tomohito Browse this author | Yatabe, Zenji Browse this author | Sato, Taketomo Browse this author →KAKEN DB |
Keywords: | Porous structure | Indium phosphide (InP) | Optical absorption property | Photocurrent | Photoelectric conversion device |
Issue Date: | 15-Aug-2013 |
Publisher: | Elsevier Science Bv |
Journal Title: | Applied Surface Science |
Volume: | 279 |
Start Page: | 116 |
End Page: | 120 |
Publisher DOI: | 10.1016/j.apsusc.2013.04.046 |
Abstract: | We investigated the optical absorption properties of InP porous structures formed by the electrochemical process using photoelectric conversion (PC) devices formed on p-n junction substrates. The photocurrent measurements revealed that the current from PC devices changed in response to the incident light power and the thickness of the top layer on the p-n interface. Since the photocarriers contributing to the observed photocurrents are excited by the photons reaching the p-n interface through the top layer, the photocurrents give us information on the optical absorption properties of the top layer. The photocurrents observed on a porous device with a porous structure in the top layer were lower than that of a non-porous device, indicating that the absorption properties of InP were enhanced after the formation of porous structures. This phenomenon can be explained in terms of absorption coefficient, α, increased by the light scattering and the sub-bandgap absorption in the porous layer. (C) 2013 Elsevier B.V. All rights reserved. |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/53128 |
Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 佐藤 威友
|