Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

Yoshimura, Masatoshi; Nakai, Eiji; Tomioka, Katsuhiro; Fukui, Takashi

doi:10.1063/1.4847355


Hokkaido University \| Library \| HUSCAP	Advanced Search		言語

	Home
	About HUSCAP
	Open Access Policy

	Browse by Author

Browse
	Communities & Collections

	Scholarly Journals
	Theses
	Doctoral Dissertations Listed by Graduate Schools
	Conference Procs.
	Events

	HUSCAP Senior (in Japanese)

	Societies

	Downloads (country)

For university staff
	How to post your papers to HUSCAP
	Publication of theses
	Helpline about theses publication

Open Archives Compliant

You can search our collection also at:
	Google
	Google Scholar
	CiNii
	IRDB
	OAIster
	NDLTD

Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >

Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

Files in This Item:

APL103-24_243111.pdf

863.02 kB

PDF

View/Open

Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/54804

Title:	Indium tin oxide and indium phosphide heterojunction nanowire array solar cells
Authors:	Yoshimura, Masatoshi Browse this author
	Nakai, Eiji Browse this author
	Tomioka, Katsuhiro Browse this author →KAKEN DB
	Fukui, Takashi Browse this author →KAKEN DB
Issue Date:	9-Dec-2013
Publisher:	American Institute of Physics
Journal Title:	Applied Physics Letters
Volume:	103
Issue:	24
Start Page:	243111
Publisher DOI:	10.1063/1.4847355
Abstract:	Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436 V, short-circuit current of 24.8 mA/cm(2), and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range. (C) 2013 AIP Publishing LLC.
Rights:	Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 103, 243111(2013) and may be found at http://scitation.aip.org/content/aip/journal/apl/103/24/10.1063/1.4847355/
Type:	article
URI:	http://hdl.handle.net/2115/54804
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 福井孝志

OAI-PMH ( junii2 , jpcoar_1.0 )

- Hokkaido University