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Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy
| Title: | Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy |
| Authors: | Noborisaka, J. Browse this author | | Motohisa, J. Browse this author →KAKEN DB | | Hara, S.3 Browse this author →KAKEN DB | | Fukui, T. Browse this author |
| Authors(alt): | 原, 真二郎3 |
| Issue Date: | 29-Aug-2005 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 87 |
| Issue: | 9 |
| Publisher DOI: | 10.1063/1.2035332 |
| Abstract: | We fabricated GaAs/AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked GaAs (111)B substrates; then AlGaAs was grown to form freestanding heterostructured nanowires. Investigation of nanowire diameter as a function of AlGaAs growth time suggested that the AlGaAs was grown on the sidewalls of the GaAs nanowires, forming GaAs/AlGaAs core-shell structures. Microphotoluminescence measurements of GaAs and GaAs/AlGaAs core-shell nanowires reveal an enhancement of photoluminescence intensity in GaAs/AlGaAs core-shell structures. Based on these core-shell nanowires, AlGaAs nanotubes were formed by using anisotropic dry etching and wet chemical preferential etching to confirm the formation of a core-shell structure and to explore a new class of materials. |
| Rights: | Copyright © 2005 American Institute of Physics |
| Relation: | http://www.aip.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5503 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 原 真二郎
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