Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/5508

Title:	Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy
Authors:	Mohan, Premila Browse this author
	Motohisa, Junichi² Browse this author →KAKEN DB
	Fukui, Takashi Browse this author →KAKEN DB
Authors(alt):	本久, 順一²
Issue Date:	5-Apr-2004
Publisher:	American Institute of Physics
Journal Title:	Applied Physics Letters
Volume:	84
Issue:	14
Start Page:	2664
End Page:	2666
Publisher DOI:	10.1063/1.1697645
Abstract:	The experimental realization of two-dimensional semiconductor artificial lattice based on InAs quantum wires is reported here. Artificial Kagome lattice fabricated using InAs quantum wires of unit cell size 0.7 mm has been theoretically proved to show ferromagnetism. Fabrication of such a structure with InAs quantum wires was attempted by selective area metalorganic vapor phase epitaxy using GaAs (111)A substrates. Temperature-dependent growth mode change was observed and Volmer-Weber growth mode at high temperature inhibited the formation of uniform structure. Low temperature and low AsH3 partial pressure resulted in the successful fabrication of 0.7 μm period InAs-based Kagome lattice structure.
Rights:	Copyright © 2004 American Institute of Physics
Relation:	http://www.aip.org/
Type:	article
URI:	http://hdl.handle.net/2115/5508
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 本久順一

OAI-PMH ( junii2 , jpcoar_1.0 )

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