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Single-electron AND/NAND logic circuits based on a self-organized dot network

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Title: Single-electron AND/NAND logic circuits based on a self-organized dot network
Authors: Nakajima, F. Browse this author
Miyoshi, Y. Browse this author
Motohisa, J.3 Browse this author →KAKEN DB
Fukui, T. Browse this author →KAKEN DB
Authors(alt): 本久, 順一3
Issue Date: 29-Sep-2003
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 83
Issue: 13
Start Page: 2680
End Page: 2682
Publisher DOI: 10.1063/1.1614845
Abstract: We experimentally demonstrated single-electron operations of an AND/NAND logic circuit based on a self-organized GaAs quantum-dot (QD) network fabricated by applying a selective-area metalorganic vapor-phase epitaxy technique. Single-electron logic operations using four cooperating single-electron tunneling (SET) transistors has been tested. This logic circuit has an architecture based on a binary decision diagram (BDD) using a Coulomb blockade (CB) in GaAs QDs, which is a representation of digital logic functions using directed graphs. BDD node devices consisting of two SET transistors achieved a two-way path switching operation in single-electron mode due to the CB effects which appeared complementarily in the two SET transistors at 1.9 K. We also demonstrated an AND/NAND operation in a logic circuit by integrating two BDD nodes.
Rights: Copyright © 2003 American Institute of Physics
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 本久 順一

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