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Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy
| Title: | Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy |
| Authors: | Mohan, Premila Browse this author | | Nakajima, Fumito Browse this author | | Akabori, Masashi Browse this author | | Motohisa, Junichi4 Browse this author →KAKEN DB | | Fukui, Takashi Browse this author →KAKEN DB |
| Authors(alt): | 本久, 順一4 |
| Issue Date: | 28-Jul-2003 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 83 |
| Issue: | 4 |
| Start Page: | 689 |
| End Page: | 691 |
| Publisher DOI: | 10.1063/1.1593823 |
| Abstract: | Artificial two-dimensional semiconductor Kagome lattice structures formed by quantum wires can show ferromagnetism when the flatband is half filled, even though it does not have any magnetic elements. Experimental realization of such a Kagome lattice structure is reported. The structure, with different pattern periods, was formed with GaAs quantum wires by selective area metalorganic vapor phase epitaxy on GaAs (111)B substrates. To overcome the lateral overgrowth and to improve the shape of smaller period pattern, flow rate modulation epitaxy was employed and a GaAs Kagome lattice structure with 1 μm period was effectively grown. |
| Rights: | Copyright © 2003 American Institute of Physics |
| Relation: | http://www.aip.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5519 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 本久 順一
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