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Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates
| Title: | Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates |
| Authors: | Kim, Hyo Jin Browse this author | | Motohisa, Junichi2 Browse this author →KAKEN DB | | Fukui, Takashi Browse this author →KAKEN DB |
| Authors(alt): | 本久, 順一2 |
| Issue Date: | 30-Dec-2002 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 81 |
| Issue: | 27 |
| Start Page: | 5147 |
| End Page: | 5149 |
| Publisher DOI: | 10.1063/1.1534385 |
| Abstract: | We investigated the formation of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on SiO2-patterned 1°, 2°, and 5°-off (001) GaAs substrates by selective area metalorganic vapor phase epitaxy technique. The SiO2 patterns were filled with various stripe opening windows along the misorientation direction of the substrates. During the growth of the GaAs buffer layer on the opening regions, the steps on the (001) top facet was affected by the widths of the (001) top facet and the misorientation angles of the substrates. Single- or double-row aligned In0.8Ga0.2As SAQDs having definite interval were successfully fabricated on the (001) top facet with optimized top width and periodicity of step bunching. These results indicate that the selective growth technique of SAQDs by utilizing SiO2-patterned vicinal substrates is promising for nanoelectronic device applications such as single-electron memory devices. |
| Rights: | Copyright © 2002 American Institute of Physics |
| Relation: | http://www.aip.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5521 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 本久 順一
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