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Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors
| Title: | Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors |
| Authors: | Motohisa, J.1 Browse this author →KAKEN DB | | Nakajima, F. Browse this author | | Fukui, T. Browse this author →KAKEN DB | | van der Wiel, W. G. Browse this author | | Elzerman, J. M. Browse this author | | De Franceschi, S. Browse this author | | Kouwenhoven, L. P. Browse this author |
| Authors(alt): | 本久, 順一1 |
| Issue Date: | 15-Apr-2002 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 80 |
| Issue: | 15 |
| Start Page: | 2797 |
| End Page: | 2799 |
| Publisher DOI: | 10.1063/1.1470246 |
| Abstract: | We report on the fabrication of a dual-gated single-electron transistor (SET) based on a quantum dot (QD) formed by selective area growth of metalorganic vapor-phase epitaxy, and its low-temperature transport properties. We observe clear Coulomb oscillations in a SET fabricated in combination with direct growth of nanostructures and lithographically defined metal gates. The magnetic field dependence of the Coulomb oscillations as well as the Coulomb diamonds suggest strong carrier confinement in our QD. |
| Rights: | Copyright © 2002 American Institute of Physics |
| Relation: | http://www.aip.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5522 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 本久 順一
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