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GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices

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タイトル: GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices
著者: Nakajima, Fumito 著作を一覧する
Ogasawara, Yuu 著作を一覧する
Motohisa, Junichi 著作を一覧する
Fukui, Takashi 著作を一覧する
発行日: 2001年 9月 1日
出版者: American Institute of Physics
誌名: Journal of Applied Physics
巻: 90
号: 5
開始ページ: 2606
終了ページ: 2611
出版社 DOI: 10.1063/1.1389482
抄録: We describe a method for fabricating GaAs dot arrays and dot-wire coupled structures having periodic nanofacets which uses selective area metalorganic vapor phase epitaxy. First, a thin GaAs buffer layer and an AlGaAs layer are grown on a masked substrate having wirelike openings with periodic width modulation. The width of AlGaAs wirelike structure is naturally squeezed by the periodic combination of nanofacets, and its top (001) surface is partially isolated by a self-limited region. Next, an AlGaAs/GaAs quantum well structure is fabricated on the substrate to form dots on the narrower top terraces, wires on the wider terraces, and ridge wires in the self-limited region. Cathodoluminescence images clearly showed dot arrays and dot-wire coupled structures were formed using this method. A single electron transistor with the same structure was also fabricated, and clear Coulomb blockade oscillation was observed. We also describe single electron tunneling devices with these dot arrays and dot-wire coupled structures.
Rights: Copyright © 2001 American Institute of Physics
Relation (URI): http://www.aip.org/
資料タイプ: article
URI: http://hdl.handle.net/2115/5524
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 本久 順一

 

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