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Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates
| Title: | Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates |
| Authors: | Motohisa, J.1 Browse this author →KAKEN DB | | Noborisaka, J. Browse this author | | Takeda, J. Browse this author | | Inari, M. Browse this author | | Fukui, T. Browse this author →KAKEN DB |
| Authors(alt): | 本久, 順一1 |
| Keywords: | A2. Selective area growth | | A3. Metalorganic vapor-phase epitaxy | | B1. Nanowires |
| Issue Date: | 10-Dec-2004 |
| Publisher: | Elsevier B.V. |
| Journal Title: | Journal of Crystal Growth |
| Volume: | 272 |
| Issue: | 1-4 |
| Start Page: | 180 |
| End Page: | 185 |
| Publisher DOI: | 10.1016/j.jcrysgro.2004.08.118 |
| Abstract: | We report on a catalyst-free approach for the growth of semiconductor nanowires which is attracting interest as building blocks for nanoscale electronics and circuits. Our approach is based on selective-area MOVPE and nanowires are grown from small circular openings of SiO2 mask defined on (1 1 1)B-oriented substrates. At optimized conditions, extremely uniform array of GaAs and InGaAs nanowires with diameter of about 200nm was grown on GaAs and InP substrates, respectively. The nanowires have hexagonal cross-section and are perpendicular to the substrates, indicating that they are surrounded by (110) facet sidewalls. By reducing the mask opening size, nanowires with diameter down to 50nm and length more than 5μm were successfully formed. Photoluminescence and transmission electron microscopy characterization was also carried out. |
| Relation: | http://www.sciencedirect.com/science/journal/00220248 |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/5525 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 本久 順一
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