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Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE

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Title: Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE
Authors: Motohisa, J.1 Browse this author →KAKEN DB
Takeda, J. Browse this author
Inari, M. Browse this author
Noborisaka, J. Browse this author
Fukui, T. Browse this author →KAKEN DB
Authors(alt): 本久, 順一1
Keywords: Metalorganic vapor phase epitaxy
Selective area growth
Photonic crystals
Nanowires
Issue Date: Jul-2004
Publisher: Elsevier B.V.
Journal Title: Physica E: Low-dimensional Systems and Nanostructures
Volume: 23
Issue: 3-4
Start Page: 298
End Page: 304
Publisher DOI: 10.1016/j.physe.2003.11.279
Abstract: We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar structures using selective area (SA) metalorganic vapor phase epitaxy (MOVPE). By performing growth on SiO2-masked (1 1 1)B GaAs substrates with circular or hexagonal hole openings, extremely uniform array of hexagonal GaAs/AlGaAs pillars consisting {1 1 0} vertical facets with their diameter of order of 100 nm were obtained. Unexpectedly, strong intense light emission was observed for the room temperature photoluminescence measurement of the pillar arrays in triangular lattice, which is promising for the application to the photonic crystals to enhance the light extraction efficiency from the materials with high refractive index. Furthermore, it was also found that hexagonal pillars with size 60 nm and large aspect ratio (>100) by reducing the size of initial hole size of mask, opening a possibility to grow nanowires using epitaxial growth.
Relation: http://www.sciencedirect.com/science/journal/13869477
Type: article (author version)
URI: http://hdl.handle.net/2115/5526
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 本久 順一

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