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Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy
| Title: | Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy |
| Authors: | Motohisa, J.1 Browse this author →KAKEN DB | | van der Wiel, W. G. Browse this author | | Elzerman, J. M. Browse this author | | De Franceschi, S. Browse this author | | Nakajima, F. Browse this author | | Ogasawara, Y. Browse this author | | Fukui, T. Browse this author →KAKEN DB | | Kouwenhoven, L. P. Browse this author |
| Authors(alt): | 本久, 順一1 |
| Keywords: | Single electron transistor | | Selective-area metalorganic vapor phase epitaxy | | Coulomb oscillation | | Kondo effect |
| Issue Date: | Apr-2002 |
| Publisher: | Elsevier Science B.V. |
| Journal Title: | Physica E: Low-dimensional Systems and Nanostructures |
| Volume: | 13 |
| Issue: | 2-4 |
| Start Page: | 687 |
| End Page: | 690 |
| Publisher DOI: | 10.1016/S1386-9477(02)00259-X |
| Abstract: | We describe transport measurements in a novel dual-gated single electron transistor based on a quantum dot (QD) fabricated by selective area growth of metalorganic vapor phase epitaxy. We observed, for the first time, clear Coulomb oscillations fabricated in combination with direct growth and lithographically defined metal gates, and achieved nearly independent control of the QD potential and the tunneling barrier height. We also were able to observe a signature of Kondo resonance when the coupling between leads and a quantum dot was sufficiently strong. |
| Relation: | http://www.sciencedirect.com/science/journal/13869477 |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/5535 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 本久 順一
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