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Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

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Title: Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
Authors: Kumakura, K. Browse this author
Makimoto, T. Browse this author
Kobayashi, N. Browse this author
Hashizume, T.4 Browse this author →KAKEN DB
Fukui, T. Browse this author
Hasegawa, H. Browse this author
Authors(alt): 橋詰, 保4
Issue Date: Jan-2005
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 86
Start Page: 052105
Publisher DOI: 10.1063/1.1861116
Abstract: We investigated the minority carrier diffusion length in p- and n-GaN by performing electron-beam-induced current measurements of GaN p–n junction diodes. Minority electron diffusion length in p-GaN strongly depended on the Mg doping concentration for relatively low dislocation density below 10(8) cm(–2). It increased from 220 to 950 nm with decreasing Mg doping concentration from 3×10(19) to 4×10(18) cm(–3). For relatively high dislocation density above 10(9) cm(–2), it was less than 300 nm and independent of the Mg doping concentration. On the other hand, the minority hole diffusion length in n-GaN was shorter than 250 nm and less affected by the dislocation density and Si doping concentration. We discuss the doping-concentration and dislocation-density dependence of minority carrier diffusion length.
Rights: Copyright © 2005 American Institute of Physics
Relation: http://www.aip.org/
Type: article
URI: http://hdl.handle.net/2115/5537
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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