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Leakage mechanism in GaN and AlGaN Schottky interfaces

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タイトル: Leakage mechanism in GaN and AlGaN Schottky interfaces
著者: Hashizume, Tamotsu 著作を一覧する
Kotani, Junji 著作を一覧する
Hasegawa, Hideki 著作を一覧する
発行日: 2004年 7月14日
出版者: American Institute of Physics
誌名: Applied Physics Letters
巻: 84
号: 24
開始ページ: 4884
終了ページ: 4886
出版社 DOI: 10.1063/1.1762980
抄録: Based on detailed temperature-dependent current–voltage (I–V–T) measurements the mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed. The experiments were compared to calculations based on thin surface barrier model in which the effects of surface defects were taken into account. Our simulation method reproduced the experimental I–V–T characteristics of the GaN and AlGaN Schottky diodes, and gave excellent fitting results to the reported Schottky I–V curves in GaN for both forward and reverse biases at different temperatures. The present results indicate that the barrier thinning caused by unintentional surface-defect donors enhances the tunneling transport processes, leading to large leakage currents through GaN and AlGaN Schottky interfaces.
Rights: Copyright © 2004 American Institute of Physics
資料タイプ: article
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 橋詰 保


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