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Leakage mechanism in GaN and AlGaN Schottky interfaces

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Title: Leakage mechanism in GaN and AlGaN Schottky interfaces
Authors: Hashizume, Tamotsu1 Browse this author →KAKEN DB
Kotani, Junji Browse this author
Hasegawa, Hideki Browse this author →KAKEN DB
Authors(alt): 橋詰, 保1
Issue Date: 14-Jul-2004
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 84
Issue: 24
Start Page: 4884
End Page: 4886
Publisher DOI: 10.1063/1.1762980
Abstract: Based on detailed temperature-dependent current–voltage (I–V–T) measurements the mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed. The experiments were compared to calculations based on thin surface barrier model in which the effects of surface defects were taken into account. Our simulation method reproduced the experimental I–V–T characteristics of the GaN and AlGaN Schottky diodes, and gave excellent fitting results to the reported Schottky I–V curves in GaN for both forward and reverse biases at different temperatures. The present results indicate that the barrier thinning caused by unintentional surface-defect donors enhances the tunneling transport processes, leading to large leakage currents through GaN and AlGaN Schottky interfaces.
Rights: Copyright © 2004 American Institute of Physics
Relation: http://www.aip.org/
Type: article
URI: http://hdl.handle.net/2115/5538
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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