Leakage mechanism in GaN and AlGaN Schottky interfaces

Hashizume, Tamotsu; Kotani, Junji; Hasegawa, Hideki

doi:10.1063/1.1762980


Hokkaido University \| Library \| HUSCAP	Advanced Search		言語

	Home
	About HUSCAP
	Open Access Policy

	Browse by Author

Browse
	Communities & Collections

	Scholarly Journals
	Theses
	Doctoral Dissertations Listed by Graduate Schools
	Conference Procs.
	Events

	HUSCAP Senior (in Japanese)

	Societies

	Downloads (country)

For university staff
	How to post your papers to HUSCAP
	Publication of theses
	Helpline about theses publication

Open Archives Compliant

You can search our collection also at:
	Google
	Google Scholar
	CiNii
	IRDB
	OAIster
	NDLTD

Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >

Leakage mechanism in GaN and AlGaN Schottky interfaces

Files in This Item:

APL84-24.pdf

207.24 kB

PDF

View/Open

Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/5538

Title:	Leakage mechanism in GaN and AlGaN Schottky interfaces
Authors:	Hashizume, Tamotsu¹ Browse this author →KAKEN DB
	Kotani, Junji Browse this author
	Hasegawa, Hideki Browse this author →KAKEN DB
Authors(alt):	橋詰, 保¹
Issue Date:	14-Jul-2004
Publisher:	American Institute of Physics
Journal Title:	Applied Physics Letters
Volume:	84
Issue:	24
Start Page:	4884
End Page:	4886
Publisher DOI:	10.1063/1.1762980
Abstract:	Based on detailed temperature-dependent current–voltage (I–V–T) measurements the mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed. The experiments were compared to calculations based on thin surface barrier model in which the effects of surface defects were taken into account. Our simulation method reproduced the experimental I–V–T characteristics of the GaN and AlGaN Schottky diodes, and gave excellent fitting results to the reported Schottky I–V curves in GaN for both forward and reverse biases at different temperatures. The present results indicate that the barrier thinning caused by unintentional surface-defect donors enhances the tunneling transport processes, leading to large leakage currents through GaN and AlGaN Schottky interfaces.
Rights:	Copyright © 2004 American Institute of Physics
Relation:	http://www.aip.org/
Type:	article
URI:	http://hdl.handle.net/2115/5538
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰保

OAI-PMH ( junii2 , jpcoar_1.0 )

- Hokkaido University