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Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
| Title: | Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric |
| Authors: | Hashizume, Tamotsu1 Browse this author →KAKEN DB | | Ootomo, Shinya Browse this author | | Hasegawa, Hideki Browse this author |
| Authors(alt): | 橋詰, 保1 |
| Issue Date: | 6-Oct-2003 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 83 |
| Issue: | 14 |
| Start Page: | 2952 |
| End Page: | 2954 |
| Publisher DOI: | 10.1063/1.1616648 |
| Abstract: | We investigated effects of electronic states at free surfaces of AlGaN/GaN heterostructure field-effect transistors (HFETs) on the inner current transport at the heterointerfaces. The analysis on transient currents for the air-exposed and H2-plasma-treated devices showed that N-vacancy-related near-surface traps play an important role in current collapse in AlGaN/GaN HFETs. An Al2O3-based surface passivation scheme including an N2-plasma surface treatment was proposed and applied to an insulated-gate HFET. A large conduction-band offset of 2.1 eV was achieved at the Al2O3/Al0.3Ga0.7N interface. No current collapse was observed in the fabricated Al2O3 insulated-gate HFETs under both drain stress and gate stress. |
| Rights: | Copyright © 2003 American Institute of Physics |
| Relation: | http://www.aip.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5540 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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