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Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces

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Title: Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces
Authors: Hashizume, Tamotsu1 Browse this author →KAKEN DB
Nakasaki, Ryusuke Browse this author
Authors(alt): 橋詰, 保1
Issue Date: 17-Jul-2002
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 80
Issue: 24
Start Page: 4564
End Page: 4566
Publisher DOI: 10.1063/1.1485309
Abstract: Detailed studies on the defect-related surface states of plasma-exposed n-GaN surfaces were carried out. An anomalous flat portion appeared in the metal–insulator–semiconductor capacitance–voltage characteristics for the sample exposed to H2 plasma, corresponding to a localized peak at EC–0.5 eV in the surface state density distribution. Atomic-force microscope and x-ray photoemission studies revealed the formation of Ga droplets on H2-plasma-treated GaN surfaces, caused by the desorption of nitrogen atoms in the form of NHx. These results suggested that a nitrogen-vacancy-related state near the conduction-band edge was introduced on the H2-plasma-treated GaN surface. No such effects took place on the N2-plasma-treated GaN surfaces.
Rights: Copyright © 2002 American Institute of Physics
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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