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Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces
| Title: | Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces |
| Authors: | Hashizume, Tamotsu1 Browse this author →KAKEN DB | | Nakasaki, Ryusuke Browse this author |
| Authors(alt): | 橋詰, 保1 |
| Issue Date: | 17-Jul-2002 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 80 |
| Issue: | 24 |
| Start Page: | 4564 |
| End Page: | 4566 |
| Publisher DOI: | 10.1063/1.1485309 |
| Abstract: | Detailed studies on the defect-related surface states of plasma-exposed n-GaN surfaces were carried out. An anomalous flat portion appeared in the metal–insulator–semiconductor capacitance–voltage characteristics for the sample exposed to H2 plasma, corresponding to a localized peak at EC–0.5 eV in the surface state density distribution. Atomic-force microscope and x-ray photoemission studies revealed the formation of Ga droplets on H2-plasma-treated GaN surfaces, caused by the desorption of nitrogen atoms in the form of NHx. These results suggested that a nitrogen-vacancy-related state near the conduction-band edge was introduced on the H2-plasma-treated GaN surface. No such effects took place on the N2-plasma-treated GaN surfaces. |
| Rights: | Copyright © 2002 American Institute of Physics | | http://www.aip.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5543 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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