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Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces

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タイトル: Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces
著者: Hashizume, Tamotsu 著作を一覧する
Nakasaki, Ryusuke 著作を一覧する
発行日: 2002年 7月17日
出版者: American Institute of Physics
誌名: Applied Physics Letters
巻: 80
号: 24
開始ページ: 4564
終了ページ: 4566
出版社 DOI: 10.1063/1.1485309
抄録: Detailed studies on the defect-related surface states of plasma-exposed n-GaN surfaces were carried out. An anomalous flat portion appeared in the metal–insulator–semiconductor capacitance–voltage characteristics for the sample exposed to H2 plasma, corresponding to a localized peak at EC–0.5 eV in the surface state density distribution. Atomic-force microscope and x-ray photoemission studies revealed the formation of Ga droplets on H2-plasma-treated GaN surfaces, caused by the desorption of nitrogen atoms in the form of NHx. These results suggested that a nitrogen-vacancy-related state near the conduction-band edge was introduced on the H2-plasma-treated GaN surface. No such effects took place on the N2-plasma-treated GaN surfaces.
Rights: Copyright © 2002 American Institute of Physics
資料タイプ: article
URI: http://hdl.handle.net/2115/5543
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 橋詰 保

 

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