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Natural oxides on air-exposed and chemically treated InGaP surfaces grown by metalorganic vapor phase epitaxy
| Title: | Natural oxides on air-exposed and chemically treated InGaP surfaces grown by metalorganic vapor phase epitaxy |
| Authors: | Hashizume, Tamotsu1 Browse this author →KAKEN DB | | Saitoh, Toshiya Browse this author |
| Authors(alt): | 橋詰, 保1 |
| Issue Date: | 16-Apr-2001 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 78 |
| Issue: | 16 |
| Start Page: | 2318 |
| End Page: | 2320 |
| Publisher DOI: | 10.1063/1.1366648 |
| Abstract: | Chemical properties of natural oxides on air-exposed and chemically treated In0.49Ga0.51P surfaces grown by metalorganic vapor phase epitaxy were systematically investigated by x-ray photoelectron spectroscopy. An air-exposed sample exhibited a highly In-rich surface which included a large amount of natural oxides. From the valence-band spectra and energy separations between core levels, it was found that the InPO4-like chemical phase was dominant in natural oxides of air-exposed InGaP surfaces. Chemical surface treatments in HCl and HF solutions were effective in reducing natural oxide and in recovering the surface stoichiometry. |
| Rights: | Copyright © 2001 American Institute of Physics |
| Relation: | http://www.aip.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5544 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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