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Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface

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Title: Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface
Authors: Hashizume, Tamotsu1 Browse this author →KAKEN DB
Authors(alt): 橋詰, 保1
Issue Date: 1-Jul-2003
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 94
Issue: 1
Start Page: 431
End Page: 436
Publisher DOI: 10.1063/1.1580195
Abstract: Chemical and electronic properties of Mg-doped p-GaN surfaces were systematically investigated by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The doping density of Mg ranged from 3×10(19) to 9×10(19) cm(–3). The XPS and AES analyses revealed the accumulation of Mg for all the air-exposed and chemically treated p-GaN surfaces. The apparent density of Mg calculated from the XPS integrated intensity and the AES intensity was more than one order higher than the value in bulk determined by secondary ion mass spectroscopy. Mg accumulation as well as large amounts of oxides made up the disordered region on the p-GaN:Mg surfaces. Large surface band bending of 1.2–1.6 eV was found at the p-GaN surfaces even after treatment in KOH and NH4OH solutions, due to the existence of high-density surface states. It was found that electron cyclotron resonance assisted N2 -plasma treatment at 300 °C for 1 min is very effective in removing such surface disordered regions and reducing surface band bending.
Rights: Copyright © 2003 American Institute of Physics
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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