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Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface

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タイトル: Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface
著者: Hashizume, Tamotsu 著作を一覧する
発行日: 2003年 7月 1日
出版者: American Institute of Physics
誌名: Journal of Applied Physics
巻: 94
号: 1
開始ページ: 431
終了ページ: 436
出版社 DOI: 10.1063/1.1580195
抄録: Chemical and electronic properties of Mg-doped p-GaN surfaces were systematically investigated by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The doping density of Mg ranged from 3×10(19) to 9×10(19) cm(–3). The XPS and AES analyses revealed the accumulation of Mg for all the air-exposed and chemically treated p-GaN surfaces. The apparent density of Mg calculated from the XPS integrated intensity and the AES intensity was more than one order higher than the value in bulk determined by secondary ion mass spectroscopy. Mg accumulation as well as large amounts of oxides made up the disordered region on the p-GaN:Mg surfaces. Large surface band bending of 1.2–1.6 eV was found at the p-GaN surfaces even after treatment in KOH and NH4OH solutions, due to the existence of high-density surface states. It was found that electron cyclotron resonance assisted N2 -plasma treatment at 300 °C for 1 min is very effective in removing such surface disordered regions and reducing surface band bending.
Rights: Copyright © 2003 American Institute of Physics
Relation (URI):
資料タイプ: article
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 橋詰 保


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